dmmt5551/dmmt5551s matched npn small signal surface mount transistor features ds30436 rev. 8 - 2 1 of 4 www.diodes.com dmmt5551/dmmt5551s ? diodes incorporated ? epitaxial planar die construction ? complementary pnp type available (dmmt5401) ? ideal for low power amplification and switching ? intrinsically matched npn pair (note 1) ? 2% matched tolerance, h fe , v ce(sat) , v be(sat) ? lead free/rohs compliant (note 4) ? "green" device (note 5 and 6) mechanical data ? case: sot-26 ? case material: molded plastic, "green" molding compound, note 7. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connections: see diagram ? terminals: solderable per mil-std-202, method 208 ? lead free plating (matte ti n finish annealed over copper leadframe). ? marking information: k4r & k4t, see page 3 ? ordering & date code information: see page 3 ? weight: 0.006 grams (approximate) s ot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d ? ? 0.95 f ? ? 0.55 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 ? all dimens ons in mm i maximum ratings @t a = 25c unless otherwise specified characteristic a symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 2) i c 200 ma power dissipation (note 2, 3) p d 300 mw thermal resistance, junction to ambient (note 2) r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. built with adjacent die from a single wafer. 2. device mounted on fr5 pcb: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document ap02001, which c an be found on our website at http:/ /www.diodes.com/dat asheets/ap02001.pdf. 3. maximum combined dissipation. 4. no purposefully added lead. 5. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. 6. product manufactured with date code 0627 (week 27, 2 006) and newer are built with green molding compound. product manuf actured prior to date code 0627 are built with non-green molding compound and may contain halogens or sb2o3 fire retardants. m j l d f b c h k c 2 e 2 e 1 b 2 b 1 c 1 c 2 e 1 c 1 b 2 e 2 b 1 dmmt5551s (k4t marking code) dmmt5551 (k4r marking code)
electrical characteristics @t a = 25c unless otherwise specified characteristic ds30436 rev. 8 - 2 2 of 4 www.diodes.com dmmt5551/dmmt5551s ? diodes incorporated symbol min max unit test condition off characteristics (note 7) collector-base breakdown voltage v (br)cbo 180 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 160 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 ? v i e = 10 a, i c = 0 collector cutoff current i cbo ? 50 na a v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c emitter cutoff current i ebo ? 50 na v eb = 4.0v, i c = 0 on characteristics (note 7) dc current gain (note 8) h fe 80 80 30 ? 250 ? ? i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v collector-emitter saturation voltage v ce(sat) ? 0.15 0.20 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) ? 1.0 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 6.0 pf v cb = 10v, f = 1.0mhz, i e = 0 small signal current gain h fe 50 250 ? v ce = 10v, i c = 1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = 10v, i c = 10ma, f = 100mhz noise figure nf ? 8.0 db v ce = 5.0v, i c = 200 a, r s = 1.0k , f = 1.0khz notes: 7. short duration pulse test used to minimize self-heating effect. 8. the dc current gain, h fe , (matched at i c = 10ma and v ce = 5v) collector emitter saturation voltage, v ce(sat) , and base emitter saturation voltage, v be(sat) are matched with typical matched tolerances of 1% and maximum of 2%. 0.04 0.05 0.06 0.07 0.08 0.09 0.15 0.14 0.13 0.12 0.11 0.10 11 01 0 0 1,000 v, c o lle c t o r t o emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 2, collector emitter saturation voltage vs. collector current c i i c b = 10 t = 150c a t = 25c a t = -50c a 0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs. ambient temperature a 150 200 250 300 350 400 0
1 10 1,000 100 1 10 100 h, d c c u r r en t g ain fe i , collector current (ma) fig. 3, dc current gain vs. collector current c v = 5v ce t = 150c a t = 25c a t = -50c a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 11 0 100 v , base emi t t e r v o l t a g e (v) be(on) i , collector current (ma) fig. 4, base emitter voltage vs. collector current c v = 5v ce t = 150c a t = 25c a t = -50c a 1 10 1,000 100 11 0 f, 1 0 0 g ain bandwid t h p r o d u c t (m h z) t i , collector current (ma) fig. 5, gain bandwidth product vs. collector current c ordering information (note 6 & 9 ) device packaging shipping dmmt5551-7-f sot-26 3000/tape & reel dmmt5551s-7-f sot-26 3000/tape & reel notes: 9. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information k4t ym c 2 b 2 e 1 e 2 c 1 b 1 k4r ym c 2 b 2 e 2 b 1 e 1 c 1 k4r = dmmt5551 product type marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september k4t = dmmt5551s product type marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key ds30436 rev. 8 - 2 3 of 4 www.diodes.com dmmt5551/dmmt5551s ? diodes incorporated year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 code p r s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d
important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. ds30436 rev. 8 - 2 4 of 4 www.diodes.com dmmt5551/dmmt5551s ? diodes incorporated
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